s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = 30v r d s ( o n ) 117m ( v g s = 10v ) r d s ( o n ) 190m ( v g s = 4.5v ) a bs olut e max imum r at ings ta = 25 s y m bol rati ng uni t v d s 30 v g s 20 t a= 25 2.5 t a= 70 2.0 i d m 10 t a= 25 1.25 t a= 70 0.8 100 166 t j 150 t s tg - 55 to 150 /w j unc ti on t em per atur e r t h ja p ar am eter conti nuous dr ai n cur r ent * 1 i d dr ai n- s our c e v ol tage g ate- s our c e v ol tage v p ul s ed dr ai n cur r ent * 2 a s tor age t em per atur e range p d p ow er di s s i pati on t her m al res i s tanc e.j unc ti on- to- a m bi ent * 1 t her m al res i s tanc e.j unc ti on- to- a m bi ent * 3 w * 2 p ul s e w i dth l i m i ted by m ax i m um j unc ti on tem per atur e. * 1 s ur fac e m ounted on fr4 b oar d, t 5 s ec . * 3 s ur fac e m ounted on fr4 b oar d. g s d 2 3 1 p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h n-cha nne l mo s f e t si2 3 0 4 ds-hf ( k i 2 3 0 4 d s - h f) 0.4 +0.1 -0.1 2.9 +0.2 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.2 2.8 +0.2 -0.1 +0.2 -0.1 1 2 3 unit: mm sot-23-3 1 . 6 0.4 0.15 +0.02 -0.02 0.55 0-0.1 0.68 +0.1 -0.1 1.1 +0.2 -0.1 1 . gate 2 . source 3 . drain
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t mar k ing m ar k i ng a 4* f e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = 250 a , v g s = 0v 30 v v d s = 30v , v g s = 0v 0.5 v d s = 30v , v g s = 0v , t a= 55 10 g ate- b ody leak age cur r ent i g s s v d s = 0v , v g s = 20v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s , i d = 250 a 1.5 3 v v d s 4.5 v , v g s = 10 v 6 v d s 4.5 v , v g s = 4.5 v 4 v g s = 10v , i d = 2.5a 117 v g s = 4.5v , i d = 2.0a 190 f or w ar d t r ans c onduc tanc e * 1 g fs v d s = 4.5v , i d = 2.5a 4.6 s input capac i tanc e c i ss 240 o utput capac i tanc e c o ss 110 rev er s e t r ans fer capac i tanc e c r ss 17 t otal g ate char ge q g v d s = 15v ,v g s = 5v ,i d = 2.5a 2.4 4 g ate- s our c e char ge q g t 4.5 10 g ate s our c e char ge q g s 0.8 g ate dr ai n char ge q g d 1.0 t ur n- o n del ay t i m e t d ( o n ) 8 20 t ur n- o n ri s e t i m e t r 12 30 t ur n- o ff del ay t i m e t d ( o f f ) 17 35 t ur n- o ff f al l t i m e t f 8 20 m ax i m um b ody - di ode conti nuous cur r ent i s 1.25 a di ode f or w ar d v ol tage v s d i s = 1.25a ,v g s = 0v 0.77 1.2 v pf nc ns v g s = 0v , v d s = 15v , f= 1m hz v g s = 10v , v d s = 15v , i d = 2.5a i d = 1a , v d s = 15v , ,r g e n = 6 r l = 15 ,v g s = 10v z er o g ate v ol tage dr ai n cur r ent a s tati c dr ai n- s our c e o n- res i s tanc e * 1 r d s ( o n ) m o n- s tate dr ai n cur r enta * 1 i d ( o n ) a i d s s * 1 p ul s e tes t: p w 300u s duty c y c l e 2% . n-cha nne l mo s f e t si2 3 0 4 ds-hf ( k i 2 3 0 4 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m o s f e t ty pic al c har ac t er is it ic s 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ?50 ?25 0 25 50 75 100 125 150 c r s s on-resistance vs. drain current s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o v d s ? drain-to-source v oltage (v) ? drain current (a) i d v g s ? gate-to-source v oltage (v) ? drain current (a) i d 0 2 4 6 8 10 0 2 4 6 8 10 0 2 4 6 8 10 0 1 2 3 4 5 0 v v g s = 10 v - 5 v 3 v 4 v 0 100 200 300 400 500 0 6 12 18 24 30 0 2 4 6 8 10 0 1 2 3 4 5 0 0.06 0.12 0.18 0.24 0.30 0 2 4 6 8 10 ga t e c ha r ge ? gate-to-source v oltage (v) q g ? t o ta l ga te c h a r ge ( n c ) v d s ? drain-to-source v oltage (v) c ? capacitance (pf) v gs c os s c i s s v d s = 15 v i d = 2.5 a ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature v g s = 10 v i d = 2.5 a t j ? junction t emperature ( c) (normalized) ? on-resistance ( r ds(on) ) v g s = 4.5 v v g s = 10 v 0 t c = 125 c ?55 c 25 c b b b b n-cha nne l mo s f e t si2 3 0 4 ds-hf ( k i 2 3 0 4 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m o s f e t . ty pic al c har ac t er is it ic s 0.01 0.10 1.00 10.00 power (w) singl e pulse power t ime (sec) t c = 25 c single pulse 10 8 4 0 2 6 0.2 0.4 0.6 0.8 1.0 1.2 ?0.6 ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 ?0.0 0.1 0.2 0.3 ?50 ?25 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0 2 4 6 8 10 e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s threshold v oltage normalized thermal t ransient impedance, junction-to-ambient square w ave pulse duration (sec) 2 1 0.1 0.01 10 ?4 10 ?3 10 ?2 10 ?1 1 normalized ef fective t ransient thermal impedance 30 ? on-resistance ( r ds(on) ) v sd v ) v ( e g a t l o v n i a r d - o t - e c r u o s ? g s ? gate-to-source v oltage (v) ? source current (a) i s t j ? t emperature ( c) v ariance (v) v gs(th) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = 2.5 a i d = 250 a 10 1 10 t j = 25 c t j = 150 c b b b b n-cha nne l mo s f e t si2 3 0 4 ds-hf ( k i 2 3 0 4 d s - h f)
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